Global specialty foundry Tower Semiconductor Ltd. (Nasdaq: TSEM; TASE: TSEM), which markets as TowerJazz, today announced that it has begun volume production of a new RF technology capable of integrating a wireless front-end module (FEM) on a single chip, tailored to meet the challenges of Internet of Things (IoT) applications. Analysts estimate that the number of IoT connected devices will grow at a 15-20% growth rate annually, reaching up to 30 billion units by 2020. McKinsey Global Institute recently estimated that IoT could generate up to $11 trillion in global value by 2025. Tower CEO is Russell Ellwanger.
The TowerJazz process enables integration of power amplifiers (PAs), switches, and low noise amplifiers as well as CMOS digital and power control on a single die. TowerJazz is delivering this product today for smartphones, tablets and wearables, and this technology also meets the more universal requirements of IoT applications by providing cost, power, performance, and form factor benefits vs. competing solutions.
As an example, TowerJazz has partnered with industry leader, Skyworks Solutions, Inc., an innovator of high performance analog semiconductors connecting people, places and things, to deliver a first of its kind integrated wireless FEM using this technology. “We are pleased that our long partnership with TowerJazz on SiGe BiCMOS for PA based products is now in volume production for key customers of Skyworks Solutions,” said Bill Vaillancourt, GM/VP Skyworks Connectivity Solutions.
TowerJazz’s new RF technology includes a 0.18um SiGe PA device with best in class silicon-based performance, a low Ron-Coff switch device, a SiGe low noise amplifier device, 5V CMOS for power control, 0.18um CMOS for integrating MIPI or other digital content as well as thick Cu metal layers for low-loss inductors and matching components. By offering all active components typically required for a wireless FEM, this technology enables a new family of products that can integrate multiple communication standards (WiFi, Bluetooth, 802.15.4 or NFC) that form the backbone of the IoT fabric today onto the same chip.
“This new technology complements our existing suite of SiGe PA and RF SOI switch technology offerings and provides customers new architectural options by enabling the combination of these elements on a single die while offering best in class silicon-based PA performance,” said Marco Racanelli, Sr. VP and GM of RF/High Performance Analog and US Aerospace & Defense Business Groups, and Newport Beach Site Manager, TowerJazz.
Published by Globes [online], Israel business news - www.globes-online.com - on May 17, 2016
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